Qualcomm has only unveiled the Snapdragon 820 last month, with the next-generation chipset expected to power the newest flagship smartphones for 2016. However, news regarding the next chipset by Qualcomm, the Snapdragon 830, is already trickling out into the rumor mill.
One of the most significant rumored piece of information regarding the Snapdragon 830 is that it would be able to support up to 8GB of RAM for mobile devices, provided that the market can keep up with the innovations required to release an 8GB RAM smartphone.
The Snapdragon 830 is likely to be created using the 10nm production process of Samsung, which is a definite possibility because the expected announcement of the chipset next year could coincide with Samsung’s launch of mass production for 10nm chips.
The decrease from 14nm to 10nm will provide the chipset with improved performance and a decrease in power requirements within the same physical footprint. The Snapdragon 830 is also said to likely deliver a similar dual-channel configuration as found in the Snapdragon 820.
Samsung revealed in September that is has started the mass production of 12GB LPDDR4 RAM chips with a 20nm process, which could lead to the creation of 6GB RAM smartphones. Around this time in 2016, Samsung could have already developed 16GB stacks, which would allow the Snapdragon 830 to possibly deliver 8GB of RAM in early 2017.
Pan Jiutang, a Chinese analyst, explains that the next flagship smartphones will utilize more advanced computing and will be performing more complicated tasks, which would necessitate the need for 8GB of RAM.
Jiutang also claims that the Snapdragon 830 will have the model designation of MSM8998, which is actually not a hard thing to deduce as the Snapdragon 820 was MSM8996 and the Snapdragon 810 before it was MSM 8994.
The information, however, is too early in the process to tag as confirmations. The Snapdragon 830 is still a long way away from being officially unveiled, and many more rumors regarding the chipset will likely be released over the coming year.